STM32F7xx —— 内部flash
这个就没什么好说的了，直接上代码了，主要封装了三个函数，擦除，写flash，读flash。
// STM32F767IGT6: 1M flash
// STM32F767ZIT6: 2M flash
#define ADDR_FLASH_SECTOR_0 ((uint32_t)0x08000000) /* Base @ of Sector 0, 32 Kbytes */
#define ADDR_FLASH_SECTOR_1 ((uint32_t)0x08008000) /* Base @ of Sector 1, 32 Kbytes */
#define ADDR_FLASH_SECTOR_2 ((uint32_t)0x08010000) /* Base @ of Sector 2, 32 Kbytes */
#define ADDR_FLASH_SECTOR_3 ((uint32_t)0x08018000) /* Base @ of Sector 3, 32 Kbytes */
#define ADDR_FLASH_SECTOR_4 ((uint32_t)0x08020000) /* Base @ of Sector 4, 128 Kbytes */
#define ADDR_FLASH_SECTOR_5 ((uint32_t)0x08040000) /* Base @ of Sector 5, 256 Kbytes */
#define ADDR_FLASH_SECTOR_6 ((uint32_t)0x08080000) /* Base @ of Sector 6, 256 Kbytes */
#define ADDR_FLASH_SECTOR_7 ((uint32_t)0x080C0000) /* Base @ of Sector 7, 256 Kbytes */
#ifdef STM32F767ZIT6
#define ADDR_FLASH_SECTOR_8 ((uint32_t)0x08100000) /* Base @ of Sector 8, 256 Kbytes */
#define ADDR_FLASH_SECTOR_9 ((uint32_t)0x08140000) /* Base @ of Sector 9, 256 Kbytes */
#define ADDR_FLASH_SECTOR_10 ((uint32_t)0x08180000) /* Base @ of Sector 10, 256 Kbytes */
#define ADDR_FLASH_SECTOR_11 ((uint32_t)0x081C0000) /* Base @ of Sector 11, 256 Kbytes */
#endif// 获取要擦除扇区编号
static uint32_t flash_sector_number(uint32_t address)
{uint32_t sector = 0;if((address < ADDR_FLASH_SECTOR_1) && (address >= ADDR_FLASH_SECTOR_0)){sector = FLASH_SECTOR_0;}else if((address < ADDR_FLASH_SECTOR_2) && (address >= ADDR_FLASH_SECTOR_1)){sector = FLASH_SECTOR_1;}else if((address < ADDR_FLASH_SECTOR_3) && (address >= ADDR_FLASH_SECTOR_2)){sector = FLASH_SECTOR_2;}else if((address < ADDR_FLASH_SECTOR_4) && (address >= ADDR_FLASH_SECTOR_3)){sector = FLASH_SECTOR_3;}else if((address < ADDR_FLASH_SECTOR_5) && (address >= ADDR_FLASH_SECTOR_4)){sector = FLASH_SECTOR_4;}else if((address < ADDR_FLASH_SECTOR_6) && (address >= ADDR_FLASH_SECTOR_5)){sector = FLASH_SECTOR_5;}else if((address < ADDR_FLASH_SECTOR_7) && (address >= ADDR_FLASH_SECTOR_6)){sector = FLASH_SECTOR_6;}
#ifdef STM32F767ZIT6else if((address < ADDR_FLASH_SECTOR_8) && (address >= ADDR_FLASH_SECTOR_7)){sector = FLASH_SECTOR_7;}else if((address < ADDR_FLASH_SECTOR_9) && (address >= ADDR_FLASH_SECTOR_8)){sector = FLASH_SECTOR_8;}else if((address < ADDR_FLASH_SECTOR_10) && (address >= ADDR_FLASH_SECTOR_9)){sector = FLASH_SECTOR_9;}else if((address < ADDR_FLASH_SECTOR_11) && (address >= ADDR_FLASH_SECTOR_10)){sector = FLASH_SECTOR_10;}else if((address < 0x081C0000) && (address >= ADDR_FLASH_SECTOR_11)){sector = FLASH_SECTOR_11;}
#elseelse if(address >= ADDR_FLASH_SECTOR_7){sector = FLASH_SECTOR_6;}
#endifreturn sector;
}// 擦除指定扇区数据 仔细的朋友会发现count没有用到，这里可以任意更改，我是为了兼容F1的命名。
void SocFlashErase(uint32_t addr, uint8_t count)
{FLASH_EraseInitTypeDef flash_erase;uint32_t flash_error;HAL_FLASH_Unlock();flash_erase.TypeErase = FLASH_TYPEERASE_SECTORS; // 擦除类型，扇区擦除flash_erase.Sector = flash_sector_number(addr); // 要擦除的扇区flash_erase.NbSectors = 1; // 一次只擦除一个扇区 这里可以使用参数的count 为了防止错误操作这里写成1flash_erase.VoltageRange = FLASH_VOLTAGE_RANGE_3; // 电压范围，VCC=2.7~3.6V之间!!__HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR |FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR | FLASH_FLAG_ERSERR | FLASH_FLAG_BSY);HAL_FLASHEx_Erase(&flash_erase, &flash_error);FLASH_WaitForLastOperation(50000);HAL_FLASH_Lock();
}uint8_t SocFlashWrite(uint32_t addr, uint8_t *buffer, uint32_t length)
{uint32_t i;uint16_t data = 0;if (length == 0){return 0;}HAL_FLASH_Unlock();__HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR |FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR | FLASH_FLAG_ERSERR | FLASH_FLAG_BSY);// 按半字编程for (i = 0; i < length; i += 2){data = (*(buffer + i + 1) << 8) + (*(buffer + i));HAL_FLASH_Program(FLASH_TYPEPROGRAM_HALFWORD, (uint32_t)(addr + i), data);}HAL_FLASH_Lock();return 0;
}uint32_t SocFlashRead(uint32_t addr, uint8_t *buffer, uint32_t length)
{memcpy(buffer, (void *)addr, length);return length;
}
F1内部flash
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